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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1248 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) *High DC Current Gain : hFE= 1000(Min) @IC= 4A *Low Collector Saturation Voltage APPLICATIONS *Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 120 V 120 V 7 V 8 A 12 A 40 W UNIT .cn mi e IC Collector Current-Continuous ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD1248 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; RBE= 120 V V(BR)EBO Emitter -Base Breakdown Voltage IE= 100mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 8mA B 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA B 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 4A; IB= 8mA B 2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 8A; IB= 80mA B ICBO Collector Cutoff Current ICEO Collector Cutoff Current hFE DC Current Gain VECF C-E Diode Forward Voltage w w scs .i w IF= 8A VCB= 120V; IE= 0 VCE= 100V; RBE= .cn mi e 1000 3.5 V 100 A 10 A IC= 4A; VCE= 3V 20000 3.0 V isc Websitewww.iscsemi.cn 2 |
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